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| RB441Q-40 SILICON EPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES for low current rectification Max. 0.45 Min. 27.5 Max. 1.9 Features * Low forward rise voltage (VF) * Small pitch enables insertion on PCBs * Glass sealed envelope for high reliability * Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current Junction Temperature Storage Temperature Range Symbol VRM VR IO IFSM Tj TS Value 40 40 100 1 125 - 40 to + 125 Unit V V mA A O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA at IF = 100 mA Reverse Current at VR = 40 V Terminal Capacitance at VR = 10 V, f = 1 MHz Symbol VF Typ. 6 Max. 0.34 0.55 100 Unit V IR CT A pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 25/06/2007 RB441Q-40 FORWARD CHARACTERISTICS 1 REVERSE CHARACTERISTICS 10m Typ. pulse measurement Typ. pulse measurement FORWARD CURRENT, AMPERES 100m REVERSE CURRENT, AMPERES 1m Ta=125 oC 10m Ta 100 =7 5C Ta= 25 C 1m =1 25 Ta=75 C C o Ta Ta= -25 C 10 Ta=25 C 1 o 100 10 0 0.2 0.4 0.6 0.7 FORWARD VOLTAGE,V 0.1 0 10 20 30 40 REVERSE VOLTAGE,V TERMINAL CAPACITANCE CHARACTERISTICS 1000 TERMINAL CAPACITANCE (pF) FORWAR SURGE CURRENT CHARACTERISTIC 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 1 10 100 1000 100 10 1 0 5 10 15 20 25 REVERSE VOLTAGE (V) FORWARD SURGE CURRENT (A) PULSE WIDTH (mS) DERATING CURVE (mounting on glass epoxy PCBs) POWER DISSIPATION, W MEAN RECTIFYING CURRENT CHARACTERISTICS 0.5 100 I O CURRENT, % 0.4 Sine wave (Tj=25 C) 80 60 40 20 0 75 100 125 0.3 DC (Tj=25 C) 0.2 0.1 0 25 50 AMBIENT TEMPERATURE, ( C) 0.5 AVERAGE FORWARD CURRENT (A) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 25/06/2007 |
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